Energy storage characteristics of {001} oriented Pb(Zr_0.52Ti_0.48)O₃ thin film grown by chemical solution deposition

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<P><B>Abstract</B></P> <P>Capacitors with high energy density and high discharging rate have been attracting attention for electric vehicles and military applications, in which the rapid discharge of large amounts of electric energy is required. Since ferroelectric thin film of perovskite structure has different polarization characteristics according to its crystallographic orientation, the charged energy density can be tailored. In this study, we investigated the effect of the crystallographic orientation of Pb(Zr<SUB>0.52</SUB>Ti<SUB>0.48</SUB>)O<SUB>3</SUB> (PZT) thin films grown by chemical solution deposition on the energy storage capability and discharging rate. The {001} and randomly oriented PZT thin films were prepared and their dielectric and ferroelectric properties, stored energy densities, and discharging rates were characterized. The storage energy density of {001}-oriented film was found to be superior to that of other films, while its efficiency was nearly the same. It is believed that {001} oriented PZT thin film has potential for use in high performance capacitors with large energy density.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Highly {001}-oriented ferroelectric PZT thin film grown by chemical solution deposition </LI> <LI> Energy storage density of the {001}-oriented PZT film reached 8.4 J/cm<SUP>3</SUP> at 80 MV/m </LI> <LI> Discharge time of the {001}-oriented PZT film was 4.1 μs at 27 MV/m </LI> </UL> </P>