Effects of Dipolar Complexes on Relaxation Behavior and Bias Aging of Rare-earth-doped BaTiO3

다국어 초록 (Multilingual Abstract)

The effects of rare earth oxides on the dielectric relaxation properties of BaTiO3 were studied as a function of frequency at various temperatures. The dielectric constants steeply decreased with decreasing frequency (<1 kHz) and the dielectric loss peaks shifted to higher frequencies with increasing temperature. The activation energies for dielectric relaxation were estimated from the frequency characteristics of the dielectric properties, and were 0.61, 0.70, and 0.77 eV for the specimens doped with Ho, Er, and Yb, respectively. The capacitance aging behavior of Mn-doped BaTiO3 was effectively suppressed by the addition of rare-earth elements. Yb-doped specimens exhibited a smaller capacitance change compared with Er or Ho. The activation energies for the reorientation of defect complex was also confirmed to be compatible with the capacitance-aging behavior under a DC bias.

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