Investigation of Low-Frequency Noise Properties in High-Mobility ZnON Thin-Film Transistors

다국어 초록 (Multilingual Abstract)

<P>We investigate the low-frequency noise (LFN) properties of amorphous zinc oxynitride (a-ZnON) thin-film transistors (TFTs) exhibiting high field-effect mobilities ranging from 48.5 to 118.9 cm<SUP>2</SUP>/V · s, depending on the gas flow rates during the deposition process. The measured noise power spectral density of the drain current shows that the LFN in a-ZnON TFTs obeys the classical 1/f noise theory, i.e., it is proportional to 1/f <SUP>γ</SUP> with γ~1 in the frequency range from 10 Hz to 1 kHz. The LFN from the a-ZnON TFT is successfully interpreted by the correlated number fluctuation-mobility fluctuation model. The near-interface dielectric trap density (Nτ) and the Coulomb scattering coefficient (α<SUB>S</SUB>) extracted from the measured LFN in a-ZnON TFTs are similar to those from the previously reported values for amorphous indium-gallium-zinc oxide TFTs. The relatively large values of N<SUB>T</SUB> and α<SUB>S</SUB> from the a-ZnON TFTs formed under O<SUB>2</SUB>-rich environment are mainly attributed to the high degree of disorder of the a-ZnON channel layer caused by the energetically broad and high density of subgap tail states.</P>