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2 Y. C. Chen, 8 : 399-, 1998
3 M. Kao, 10 : 580-, 1989
4 G. M. Metze, 11 : 24-, 1990
5 L. D. Nguyen, 39 : 2007-, 1992
6 P. C. Chao, 11 : 59-, 1990
7 P. Ho, 27 : 325-, 1991
8 K. B. Chough, 13 : 451-, 1992
9 P. M. Smith, 5 : 230-, 1995
10 D. M. Gill, 14 : 3400-, 1996
1 A. Mahajan, 18 : 284-, 1997
2 Y. C. Chen, 8 : 399-, 1998
3 M. Kao, 10 : 580-, 1989
4 G. M. Metze, 11 : 24-, 1990
5 L. D. Nguyen, 39 : 2007-, 1992
6 P. C. Chao, 11 : 59-, 1990
7 P. Ho, 27 : 325-, 1991
8 K. B. Chough, 13 : 451-, 1992
9 P. M. Smith, 5 : 230-, 1995
10 D. M. Gill, 14 : 3400-, 1996
11 P. H. Lai, 89 : 263503-263501, 2006
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13 민우 하, "New Post-Annealing Method for Unpassivated AlGaN/GaN High Electron Mobility Transistors Employing XeCl Excimer Laser Pulses" 한국물리학회 47 (47): 568-571, 2005
14 Ching-Sung Lee, "Investigations of δ -Doped In0.52Al0.48As/InxGa1-xAs/InP HEMTs with Different Channel Structures" 한국물리학회 47 (47): 1046-1052, 2005
15 C. S Lee, "Analytic Modeling for Current-Voltage Characteristics and Drain-Induced Barrier-Lowering (DIBL) Phenomenon of the InGaP/InGaAs/GaAs PDCFET" 한국물리학회 45 (45): 513-518, 2004