Modulation Doping Effect in the Optical Gain of Type-II GaAsSb/GaAs Quantum-Well Structures

다국어 초록 (Multilingual Abstract)

The effect of modulation doping on the optical gain characteristics
of type-II GaAsSb/GaAs quantum-well (QW) lasers was investigated
using a self-consistent method. The interband transition energy
gradually increased with n-type modulation doping. However, in the
case of p-type modulation doping, the rate of increase was found to
be smaller than that of n-type modulation doping. The optical gain
was found to be largely enhanced by an increasing n-type modulation
doping density. This could be explained by the fact that the optical
matrix element was greatly increased due to the band-bending effect.
On the other hand, in the case of p-type modulation doping, the
optical gain was slightly smaller than that for n-type modulation
doping because the optical matrix element was reduced by the
negative charge from the ionized acceptors near the well.

다국어 초록 (Multilingual Abstract)

The effect of modulation doping on the optical gain characteristics
of type-II GaAsSb/GaAs quantum-well (QW) lasers was investigated
using a self-consistent method. The interband transition energy
gradually increased with n-type modulation doping. However, in the
case of p-type modulation doping, the rate of increase was found to
be smaller than that of n-type modulation doping. The optical gain
was found to be largely enhanced by an increasing n-type modulation
doping density. This could be explained by the fact that the optical
matrix element was greatly increased due to the band-bending effect.
On the other hand, in the case of p-type modulation doping, the
optical gain was slightly smaller than that for n-type modulation
doping because the optical matrix element was reduced by the
negative charge from the ionized acceptors near the well.

참고문헌 (Reference)

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