<P>Sharp edge definition of annealed ohmic contacts is of great concern in AlGaN/GaN high electron mobility transistors (HEMTs) because it is strongly associated with breakdown voltage uniformity and reliability. In this reported work, two-step ...
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https://www.riss.kr/link?id=A107629967
2011
-
SCOPUS,SCIE
학술저널
725-726(2쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
<P>Sharp edge definition of annealed ohmic contacts is of great concern in AlGaN/GaN high electron mobility transistors (HEMTs) because it is strongly associated with breakdown voltage uniformity and reliability. In this reported work, two-step ...
<P>Sharp edge definition of annealed ohmic contacts is of great concern in AlGaN/GaN high electron mobility transistors (HEMTs) because it is strongly associated with breakdown voltage uniformity and reliability. In this reported work, two-step sequential annealing in conjunction with a low-damage SiN<SUB>x</SUB> dry etching technique was employed in a prepassivation process in order to improve the edge acuity in annealed ohmic contacts. As a result, uniformity in breakdown voltage was significantly improved in comparison with a conventional process.</P>
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