화학 용액 증착법으로 제조한 xBiFeO3-(1-x)SrBi4Ti4O15 (x=0.5) 박막의 전기적 특성 = Electrical Properties of xBiFeO3-(1-x)SrBi4Ti4O15 (x=0.5) Thin Films Prepared by Using Chemical Solution Deposition

다국어 초록 (Multilingual Abstract)

We prepared 0.5BiFeO3-0.5SrBi4Ti4O15 (SBFTi55) thin
films on Pt(111)/Ti/SiO2/Si(100) substrate by using a chemical
solution deposition method. The SBFTi55 thin films were annealed at
650, 675, and 700℃ for 3 min by using a rapid thermal
annealing process under an oxygen atmosphere. We investigated the
effect of the annealing temperature on the microstructures and the
electrical properties of the SBFTi55 thin films. The crystallization
and the surface microstructures of the SBFTi55 thin films were
analyzed by using X-ray diffraction (XRD) and scanning electron
microscopy (SEM) results. The SBFTi55 thin film annealed at 650℃ exhibited better ferroelectricity than the SBFTi55 thin
films annealed at 675, and 700℃. The remanent polarization
(2Pr) of the SBFTi55 thin films annealed at 650℃ was 33
μC/cm2 at 250 kV/cm. The leakage current density of the
SBFTi55 thin films was 1.28 × 10−6 A/cm2 at 100
kV/cm. According to the J-E curves for the SBFTi55 thin films,
the current conduction mechanisms were found to be dominated by
Ohmic and space-charge-limited conduction. The values of the pulse
polarizations of the SBFTi55 thin films were reasonably unchanged up
to 1.4 × 1010 switching cycles.

국문 초록 (Abstract)

화학 용액 증착법으로 Pt(111)/Ti/SiO2/Si(100) 기판 위에
xBiFeO3-(1−x)SrBi4Ti4O15 (x = 0.5) 박막을 성장시켜
박막의 미세구조와 전기적 특성을 측정, 비교 분석하였다. 성장된 박막은
650, 675, 700℃의 산소 분위기에서 급속열처리법으로
열처리하였으며 박막의 결정화 상태와 미세구조는 X-선회절장치,
주사전자현미경 측정으로부터 알아 보았다. 이 박막의 전기적 특성은
순수한 BiFeO3나 SrBi4Ti4O15 박막보다 크게 향상되었는데
외부 전기장 250 kV/cm일 때 650℃에서 열처리된 박막의 잔류
분극과 항전기장 값은 각각 33μC/cm2, 150 kV/cm이었다. 또 외부
전기장 100 kV/cm일 때 누설전류 밀도는 1.28×10-6A/cm2이었으며 1.44 × 10−10까지 피로 현상을 보이지
않았다.

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