Observation of Complete Oxidation of InN to In2O3 in Air at Elevated Temperatures by Using X-ray Photoemission Spectroscopy

다국어 초록 (Multilingual Abstract)

We present here an X-ray photoemission spectroscopy (XPS) analysis of a polycrystalline InN
film on sapphire. The InN was completely oxidized to bixbyite in air after annealing at high temperatures.
The analysis of the X-ray diffraction data demonstrated that the oxidation process started
around 450 C. The high-resolution XPS data showed the In3d peaks and the N1s main peak located
near 396.4 eV for the InN films. After oxidation, the N1s peak had completely disappeared while
the In3d peaks had not changed. These results strongly indicate that the oxidation transformed
the structure of InN film to In2O3.

참고문헌 (Reference)

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