<P><B>Direct atomic displacement mapping at ferroelectric interfaces</B> by aberration corrected scanning transmission electron microscopy(STEM) (a‐STEM image, b‐corresponding displacement profile) is combined with Landau...
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https://www.riss.kr/link?id=A107566105
2011
-
SCI,SCIE,SCOPUS
학술저널
2474-2479(6쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
<P><B>Direct atomic displacement mapping at ferroelectric interfaces</B> by aberration corrected scanning transmission electron microscopy(STEM) (a‐STEM image, b‐corresponding displacement profile) is combined with Landau...
<P><B>Direct atomic displacement mapping at ferroelectric interfaces</B> by aberration corrected scanning transmission electron microscopy(STEM) (a‐STEM image, b‐corresponding displacement profile) is combined with Landau‐Ginsburg‐Devonshire theory to obtain the complete interface electrostatics in real space, including separate estimates for the polarization and intrinsic interface charge contributions. </P>
End‐Capping Effect of a Narrow Bandgap Conjugated Polymer on Bulk Heterojunction Solar Cells