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      KCI등재 SCIE SCOPUS

      Approaches to Sustainability in Chemical Mechanical Polishing (CMP): A review

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      https://www.riss.kr/link?id=A108013184

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      다국어 초록 (Multilingual Abstract)

      Chemical mechanical polishing (CMP) is an essential planarization process for semiconductor manufacturing. The application of CMP has been increasing in semiconductor fabrication for highly integrated devices. Recently, environmental burden caused by ...

      Chemical mechanical polishing (CMP) is an essential planarization process for semiconductor manufacturing. The application of CMP has been increasing in semiconductor fabrication for highly integrated devices. Recently, environmental burden caused by the CMP process was assessed because of interest in the global environment. In this study, the previously reported impacts of CMP on the environment and studies conducted on developing various methods to reduce environmental burden are reviewed. In addition to analyzing the impacts of CMP, this paper introduces a method for treating CMP wastewater and improving the material removal efficiency through the improvement of CMP consumables. Finally, the authors review research on hybridization of the CMP process and discuss the direction in which CMP technology will progress to improve sustainability in the future.

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      참고문헌 (Reference)

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      2 이현섭, "화학기계적 연마(CMP) 공정에서의 트라이볼로지 연구 동향" 한국트라이볼로지학회 34 (34): 115-122, 2018

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      2 이현섭, "화학기계적 연마(CMP) 공정에서의 트라이볼로지 연구 동향" 한국트라이볼로지학회 34 (34): 115-122, 2018

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      9 L.R.R. da Silva, "Tribological behavior of gray cast iron textured by maskless electrochemical texturing" Elsevier BV 376-377 : 1601-1610, 2017

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      59 이우진 ; Hyung-Soon Park ; 신현철, "Enhancement of CMP pad lifetime for shallow trench isolation process using profile simulation" 한국물리학회 9 (9): 134-137, 2009

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      74 Kai Zhang, "Effect of Chelating Agent and Ammonium Dodecyl Sulfate on the Interfacial Behavior of Copper CMP for GLSI" The Electrochemical Society 7 (7): P509-P517, 2018

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      88 Yong-Jin Seo, "Chemical mechanical polishing of Ba0.6Sr0.4TiO3 film prepared by sol–gel method" Elsevier BV 75 (75): 149-154, 2004

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      91 Wen-Hui Kuan, "Chemical evidences for the optimal coagulant dosage and pH adjustment of silica removal from chemical mechanical polishing (CMP) wastewater" Elsevier BV 342 (342): 1-7, 2009

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      112 Joon-Yeon Park, "A Study on the Influence of the Cross-Sectional Shape of the Metal-Inserted Retainer Ring and the Pressure Distribution from the Multi-Zone Carrier Head to Increase the Wafer Yield" MDPI AG 10 (10): 8362-, 2020

      113 Wei Li, "A Study on Surface Quality of GaN with CMP Polishing Process" Trans Tech Publications, Ltd. 291-294 : 1764-1767, 2011

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