We report the properties of upconversion photoluminescence (UCPL) on SrLaMgTaO<SUB>6</SUB> crystal doped with trivalent erbium at concentrations of 1-20mol% that were synthesized by a solid state reaction method from powder based precursor...
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https://www.riss.kr/link?id=A107430857
Kim, D.R. ; Park, S.W. ; Jeong, J.H. ; Choi, H. ; Kim, J.H.
2017
-
SCOPUS,SCIE
학술저널
216-221(6쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
We report the properties of upconversion photoluminescence (UCPL) on SrLaMgTaO<SUB>6</SUB> crystal doped with trivalent erbium at concentrations of 1-20mol% that were synthesized by a solid state reaction method from powder based precursor...
We report the properties of upconversion photoluminescence (UCPL) on SrLaMgTaO<SUB>6</SUB> crystal doped with trivalent erbium at concentrations of 1-20mol% that were synthesized by a solid state reaction method from powder based precursors. The crystal structure, electronic structure, and optical properties of SrLa<SUB>(1-x)</SUB>MgTaO<SUB>6</SUB>:Er<SUB>x</SUB> were discussed by using X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), UV-vis spectrophotometer, DFT (density functional theory) calculations and photoluminescence (PL) spectra. Under the excitation of a 975nm laser diode, the phosphors emitted green (<SUP>2</SUP>H<SUB>1½</SUB>, <SUP>4</SUP>S<SUB>3/2</SUB>→<SUP>2</SUP>I<SUB>15/2</SUB>) and red (<SUP>4</SUP>F<SUB>9/2</SUB>→<SUP>2</SUP>I<SUB>15/2</SUB>) UCPL. Under the 10mol% concentration of Er<SUP>3+</SUP>, the intensity of the green UCPL had increased in a linearly proportional to Er<SUP>3+</SUP> concentration, which was attributed to the UCPL of low concentration of Er<SUP>3</SUP> and it was mostly generated from ESA process. From higher Er<SUP>3+</SUP>concentration above 10 mol%, however, as the ETU process had additionally participated in UCPL the intensity of UCPL had decreased. It was attributed to the concentration quenching which was more active than ETU process at higher concentration of Er<SUP>3+</SUP> in SrLaMgTaO<SUB>6</SUB>.
Effect of hydrogen annealing on the resistive switching characteristics of BiMnO3 thin films