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2 L. Chen, "Vertical Ge/Si core/shell nanowire junctionless transistor" 16 (16): 420-426, 2016
3 A. M. Lonescu, "Tunnel field-effect transistors as energy-efficient electronic switches" 479 : 329-337, 2011
4 W. Zhang, "The ITFET: A Novel FinFET-Based Hybrid Device" 53 (53): 2335-2343, 2006
5 Young Jun Yoon, "Sub-10 nm Ge/GaAs Heterojunction-Based Tunneling Field-Effect Transistor with Vertical Tunneling Operation for Ultra-Low-Power Applications" 대한전자공학회 16 (16): 172-178, 2016
6 J.-G. Yun, "Stacked-nanowire device with virtual source/drain (SD-VSD) for 3D NAND flash memory application" 64 (64): 42-46, 2011
7 S. Cho, "Silicon-compatible compound semiconductor tunneling field-effect transistor for high performance and low standby power operation" 99 (99): 243505-, 2011
8 S. Cho, "Silicon-compatible compound semiconductor tunneling field-effect transistor for high performance and low standby power operation" 99 (99): 243505-, 2011
9 H. Kim, "Silicon-Based Floating-Body Synaptic Transistor With Frequency-Dependent Short- and Long-Term Memories" 37 (37): 249-252, 2016
10 S. Cho, "RF Performance and Small-Signal Parameter Extraction of Junctionless Silicon Nanowire MOSFETs" 58 (58): 1388-1396, 2011
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24 S. D. Suk, "Characteristics of sub 5nm tri-gate nanowire MOSFETs with single and poly Si channels in SOI structure" 142-143, 2009
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27 H. Aochi, "BiCS Flash as a Future 3D Non-Volatile Memory Technology for Ultra High Density Storage Devices" 1-2, 2009
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29 S. J. Choi, "A novel TFT with a laterally engineered bandgap for of 3D logic and flash memory" 111-112, 2010
30 H.-T. Lue, "A highly scalable 8-layer 3D vertical-gate (VG) TFT NAND Flash using junction-free buried channel BE-SONOS device" 131-132, 2010