<B>Graphic Abstract</B> <P>One diode–one resistor (1D–1R) hybrid-type devices consisting of an inorganic Schottky diode and an organic unipolar memory show electrically rewritable switching characteristics as well as r...
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https://www.riss.kr/link?id=A107585850
2010
-
SCI,SCIE,SCOPUS
학술저널
1228-1232(5쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
<B>Graphic Abstract</B> <P>One diode–one resistor (1D–1R) hybrid-type devices consisting of an inorganic Schottky diode and an organic unipolar memory show electrically rewritable switching characteristics as well as r...
<B>Graphic Abstract</B>
<P>One diode–one resistor (1D–1R) hybrid-type devices consisting of an inorganic Schottky diode and an organic unipolar memory show electrically rewritable switching characteristics as well as rectifying properties. The 1D–1R array architecture improves the sensing efficiency of the array memory cell, ultimately creating the possibility for high-density integrated organic memory devices without restrictions due to cross-talk between cells.
<img src='wiley_img_2010/09359648-2010-22-11-ADMA200903203-content.gif' alt='wiley_img_2010/09359648-2010-22-11-ADMA200903203-content'>
</P>
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