<P>The aim of this letter is to analyze the spatial distribution of trapped charges in the type of dopant-segregated Schottky barrier (DSSB)-embedded FinFET SONOS devices used in NAND-type flash memory. Due to localized programming by carrier in...
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https://www.riss.kr/link?id=A107602114
2009
-
SCOPUS,SCIE
학술저널
1084-1086(3쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
<P>The aim of this letter is to analyze the spatial distribution of trapped charges in the type of dopant-segregated Schottky barrier (DSSB)-embedded FinFET SONOS devices used in NAND-type flash memory. Due to localized programming by carrier in...
<P>The aim of this letter is to analyze the spatial distribution of trapped charges in the type of dopant-segregated Schottky barrier (DSSB)-embedded FinFET SONOS devices used in NAND-type flash memory. Due to localized programming by carrier injection with extra kinetic energy, the spatial distribution of electrons trapped in an O/N/O layer of a DSSB SONOS device after a short time of programming differs from that in an O/N/O layer of a conventional SONOS device, which results in the degradation of subthreshold slope (SS). Note that the degraded SS recovers as the program time increases. The measured and simulated data confirm that the high speed of the programming is due largely to the localized trapped charges injected from DSSB source/drain junctions.</P>
Parasitic BJT Read Method for High-Performance Capacitorless 1T-DRAM Mode in Unified RAM