Current Tunneling Characterization of Oxidized Black Phosphorus by Graphite Thin Film Electrodes

다국어 초록 (Multilingual Abstract)

In this work, oxidized black phosphorus (BP) was trapped in the top and bottom interfaces of graphite thin film electrodes by hexagonal boron nitride (hBN) encapsulation. Upon using partial encapsulation of hBN on BP, the oxidation of bare BP area led to the oxidation of hBN encapsulated whole BP, and this oxidized BP could be confined in the hBN layer. Furthermore, by attaching graphite thin film electrodes on and underneath the oxidized BP layer, charge carrier injection and extraction behavior from measuring the current tunneling was characterized by applying a bias voltage between the top and the bottom graphite thin film electrodes. The electrical characteristics according to applied bias voltage was confirmed with a double log plot. It was found that the ohmic current region exists in the low voltage state, and the space-charge-limited conduction region exists in the high voltage state.