<P>In this study, novel nonvolatile memory devices, based on a high performance polyimide, poly(3,3′-bis(diphenylcarbamyloxy)-4,4′-biphenylene hexafluoroisopropylidenediphthalimide) (6F-HAB-DPC PI), were fabricated with a simple conv...
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https://www.riss.kr/link?id=A107630159
2009
-
SCI,SCIE,SCOPUS
학술저널
2207-2214(8쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
<P>In this study, novel nonvolatile memory devices, based on a high performance polyimide, poly(3,3′-bis(diphenylcarbamyloxy)-4,4′-biphenylene hexafluoroisopropylidenediphthalimide) (6F-HAB-DPC PI), were fabricated with a simple conv...
<P>In this study, novel nonvolatile memory devices, based on a high performance polyimide, poly(3,3′-bis(diphenylcarbamyloxy)-4,4′-biphenylene hexafluoroisopropylidenediphthalimide) (6F-HAB-DPC PI), were fabricated with a simple conventional solution coating process. The devices were found to exhibit programmable, rewritable nonvolatile memory characteristics with a high ON/OFF current ratio of up to 10<SUP>9</SUP>, a long retention time in both ON and OFF states, and low power consumption. Moreover, the active 6F-HAB-DPC PI layer is thermally and dimensionally stable and thus hybridization with a complementary metal-oxide-semiconductor platform is feasible. The advantageous properties and ease of fabrication of the 6F-HAB-DPC PI based devices open up the possibility of the mass production of high performance digital nonvolatile polymer memory devices at low cost.</P> <P>Graphic Abstract</P><P>Electrical devices were fabricated with a thermally stable new polyimide. They reveal excellent memory characteristics, opening up the possibility of mass production of high performance nonvolatile memory devices at low cost.
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