게이트 절연막의 표면처리에 의한 비정질 인듐갈륨징크옥사이드 박막트랜지스터의 계면 상태 조절 = Interface State Control of Amorphous InGaZnO Thin Film Transistor by Surface Treatment of Gate Insulator

다국어 초록 (Multilingual Abstract)

Recently, amorphous oxide semiconductors (AOSs) based thin-film transistors (TFTs) have received considerable attention for application in the next generation displays industry. The research trends of AOSs based TFTs investigation have focused on the high device performance. The electrical properties of the TFTs are influenced by trap density. In particular, the threshold voltage ($V_{th}$) and subthreshold swing (SS) essentially depend on the semiconductor/gate-insulator interface trap. In this article, we investigated the effects of Ar plasma-treated $SiO_2$ insulator on the interfacial property and the device performances of amorphous indium gallium zinc oxide (a-IGZO) TFTs. We report on the improvement in interfacial characteristics between a-IGZO channel layer and gate insulator depending on Ar power in plasma process, since the change of treatment power could result in different plasma damage on the interface.

참고문헌 (Reference)

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