Improvement of Device Characteristic on Solution-Processed InGaZnO Thin-Film-Transistor (TFTs) using Microwave Irradiation

다국어 초록 (Multilingual Abstract)

Solution-derived amorphous indium-gallium-zinc oxide (a-IGZO) thin-film-transistor (TFTs) were developed using a microwave irradiation treatment at low process temperature below 300°C. Compared to conventional furnace-annealing, the a-IGZO TFTs annealed by microwave irradiation exhibited better electrical characteristics in terms of field effect mobility, SS, and on/off current ratio, although the annealing temperature of microwave irradiation is much lower than that of furnace annealing. The microwave irradiated TFTs showed a smaller Vth shift under the positive gate bias stress (PGBS) and negative gate bias stress (NGBS) tests owing to a lower ratio of oxygen vacancies, surface absorbed oxygen molecules, and reduced interface trapping in a-IGZO. Therefore, microwave irradiation is very promising to low-temperature process.

목차 (Table of Contents)

• Abstract
• Ⅰ. INTRODUCTION
• Ⅱ. EXPERIMENT
• Ⅲ. RESULTS AND DISCUSSION
• Ⅳ. CONCLUSIONS
• REFERENCES

참고문헌 (Reference)

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