수소 환원기체와 (hfac)Cu(3,3-dimethyl-1-butene) 증착원을 이용한 Pulsed MOCVD로 Cu seed layer 증착 특성에 미치는 영향에 관한 연구 = Pulsed MOCVD of Cu Seed Layer Using a (hfac)Cu(3,3-dimethyl-1-butene) Source and H₂ Reactant

다국어 초록 (Multilingual Abstract)

Pulsed metalorganic chemical vapor deposition (MOCVD) of conformal copper seed layers, for the electrodeposition Cu films, has been achieved by an alternating supply of a Cu(I) source and $H_2$ reactant at the deposition temperatures from 50 to $100^{\circ}C$. The Cu thickness increased proportionally to the number of cycles, and the growth rate was in the range from 3.5 to $8.2{\AA}/cycle$, showing the ability to control the nano-scale thickness. As-deposited films show highly smooth surfaces even for films thicker than 100 nm. In addition about a $90\%$ step coverage was obtained inside trenches, with an aspect ratio greater than 30:1. $H_2$, introduced as a reactant gas, can play an active role in achieving highly conformal coating, with increased grain sizes.

참고문헌 (Reference)

1 "Proc. of the 1998 Advanced Metallization Conference for ULSI Applications" 405-, 1998.

2 "1997 IEEE Int. Electron Devices Meet. Digest" 773-, 1997