Properties of Photoluminescience for AgInS2/GaAs Epilayer Grown by Hot Wall Epitaxy

다국어 초록 (Multilingual Abstract)

The AgInS2 epilayers with chalcopyrite structure grown by using a hot-wall epitaxy (HWE) method have been confirmed to be a high quality crystal. From the optical absorption measurement, the temperature dependence of the energy band gap on the AgInS2/GaAs was derived as the Varshni's relation of Eg(T) = 2.1365 eV - (9.89 × 10-3 eV/K) T2/(2930 ＋T eV). After the as-grown AgInS2/GaAs was annealed in Ag-, S-, and In-atmosphere, the origin of point defects of the AgInS2/GaAs has been investigated by using the photoluminescence (PL) at 10 K. The native defects of VAg, VS, Agint, and Sint obtained from PL measurement were classified to donors or acceptors type. And, we concluded that the heat-treatment in the S-atmosphere converted the AgInS2/GaAs to optical p-type. Also, we confirmed that the In in the AgInS2/GaAs did not form the native defects because the In in AgInS2 did exist as the form of stable bonds.

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