<B>Graphic Abstract</B> <P>A novel memory cell structure with a Pt/Ti-doped NiO/Pt architecture is shown to exhibit the lowest write current reported thus far for a unipolar switching resistance-change-based device, as shown in th...
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https://www.riss.kr/link?id=A107449923
Ahn, S.-E. ; Lee, M.-J. ; Park, Y. ; Kang, B. S. ; Lee, C. B. ; Kim, K. H. ; Seo, S. ; Suh, D.-S. ; Kim, D.-C. ; Hur, J. ; Xianyu, W. ; Stefanovich, G. ; Yin, H. ; Yoo, I.-K. ; Lee, J.-H. ; Park, J.-B. ; Baek, I.-G. ; Park, B. H.
2008
-
SCI,SCIE,SCOPUS
학술저널
924-928(5쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
<B>Graphic Abstract</B> <P>A novel memory cell structure with a Pt/Ti-doped NiO/Pt architecture is shown to exhibit the lowest write current reported thus far for a unipolar switching resistance-change-based device, as shown in th...
<B>Graphic Abstract</B>
<P>A novel memory cell structure with a Pt/Ti-doped NiO/Pt architecture is shown to exhibit the lowest write current reported thus far for a unipolar switching resistance-change-based device, as shown in the figure. The write current decreases dramatically upon scaling to cell sizes smaller than 100 nm×100 nm. High-density universal memory can be fabricated by combining this node element with a selective switch.
<img src='wiley_img/09359648-2008-20-5-ADMA200702081-content.gif' alt='wiley_img/09359648-2008-20-5-ADMA200702081-content'>
</P>