MPECVD법에 의한 초경인서트 공구의 c-BN 박막 증착

다국어 초록 (Multilingual Abstract)

Cubic boron nitride(c-BN) films were deposited on tungsten carbide insert tool by microwave plasma enhanced chemical vapor deposition(MPECYD) from a gas mixture of triethyl borate(B(C₂H?O)₃, ammonia (NH₃), hydrogen(H₂) and argon(Ar). The qualities of deposited thin film were investigated by x-ray diffraction(XRD), field emission scanning electron microscopy(FE-SEM) and micro Raman spectroscope. The surface morphologies of the synthesised BN as well as crystallinity appear to be highly dependent on the flow rate of B(C₂H?O)₃ and NH₃ gases. The deposited film had more crystallized phases with 5 seem of B(C₂H?O)₃ and NH₃ gases than with 2 seem, and the phase was identified as c-BN by micro Raman spectroscope and XRD. The adhesion strength were also increased with increasing flow rates of B(C₂H?O)₃ and NH₃ gases.

목차 (Table of Contents)

• Abstract
• 1. 서론
• 2. 실험방법
• 3. 실험결과 및 고찰
• 4. 결론
• 후기
• 참고문헌

참고문헌 (Reference)

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6 J. H. Edgar, "Properties of Group III NitT'ides" INSPEC 1994

7 최진일, "EACVD법에 의한 고속도강에의 c-BN박막형성 및 특성에 관하여" 한국표면공학회 39 (39): 87-92, 2006

8 Eli R. C. DeVries, "Diamond and Diamond-Like Films and Coatings" Plenum Press 151-, 1991