Formation of High-Dielectric Layers through Annealing of Polystyrene@Barium Titanate Arrays for Embedded Capacitor

다국어 초록 (Multilingual Abstract)

High-dielectric thin films are crucial materials that determine the performance of charge storage devices inelectronic circuits, particularly in embedded capacitors where they are realized through composite films of polymers andhigh-dielectric ceramic fillers. As an efficient fabrication method, polystyrene@barium titanate (PS@BT) particles weresynthesized, arranged into layers via drop casting, and then thermally fused to form high-dielectric composite films.
Cross-sectional observations of the composite films revealed that BT particles were uniformly distributed within the PSmatrix without any layer separation or agglomeration. Dielectric property investigations showed that thin films with BTcontents of 55.6 wt% (PS@BT-1) and 65.7 wt% (PS@BT-2) exhibited dielectric constants of 30.9 and 36.2, respectively,with leakage current densities of 5.98 and 496 nA/cm2. It was confirmed that a percolation point for leakage currentexisted between these BT content levels. For the PS@BT-1 film, which demonstrated a high breakdown voltage of126 V/μm, an energy storage density of 2.17 J/cm3 was achieved.