Synthesis of high-quality monolayer graphene by low-power plasma

다국어 초록 (Multilingual Abstract)

The growth of high-quality graphene on copper substrates has been intensively investigated using chemical vapor deposition (CVD). It, however, has been considered that the growth mechanism is different when graphene is synthesized using a plasma CVD. In this study, we demonstrate a dual role of hydrogen for the graphene growth on copper using an inductively coupled plasma (ICP) CVD. Hydrogen activates surface-bound carbon for the growth of high-quality monolayer graphene. In contrast, the role of an etchant is to manipulate the distribution of the graphene grains, which significantly depends on the plasma power. Atomic-resolution transmission electron microscopy study enables the mapping of graphene grains, which uncovers the distribution of grains and the number of graphene layers depending on the plasma power. In addition, the variation of electronic properties of the synthesized graphene relies on the plasma power.

참고문헌 (Reference)

1 A. Reina, "few-layer graphene films on arbitrary substrates by chemical vapor deposition" 9 : 30-35, 2009

2 C. Berger, "Ultrathin epitaxial graphite : 2D electron gas properties and a route toward graphene-based nanoelectronics" 108 : 19912-19916, 2004

3 K. S. Novoselov, "Two-dimensional gas of massless Dirac fermions in graphene" 438 : 197-200, 2005

4 X. S. Li, "Transfer of large-area graphene films for high-performance transparent conductive electrodes" 9 : 4359-4363, 2009

5 A. A. Balandin, "Thermal properties of graphene and nanostructured carbon materials" 10 : 569-581, 2011

6 A. K. Geim, "The rise of graphene" 6 : 183-191, 2007

7 J.H. Kim, "The hide-and-seek of grain boundaries from moire pattern fringe of two-dimensional graphene" 5 : 2015

8 A. H. Castro Neto, "The electronic properties of graphene" 81 : 109-162, 2009

9 D. C. Wei, "Synthesis of N-doped graphene by chemical vapor deposition and its electrical properties" 9 : 1752-1758, 2009

10 K. Davami, "Synthesis and characterization of carbon nanowalls on different substrates by radio frequency plasma enhanced chemical vapor deposition" 72 : 372-380, 2014

11 A. A. Balandin, "Superior thermal conductivity of single-layer graphene" 8 : 902-907, 2008

12 D.A. Boyd, "Single-step deposition of high-mobility graphene at reduced temperatures" 6 : 2015

13 I. Vlassiouk, "Role of hydrogen in chemical vapor deposition growth of large single-crystal graphene" 5 : 6069-6076, 2011

14 Y. M. Li, "Preferential growth of semiconducting single-walled carbon nanotubes by a plasma enhanced CVD method" 4 : 317-321, 2004

15 Z. Bo, "Plasma-enhanced chemical vapor deposition synthesis of vertically oriented graphene nanosheets" 5 : 5180-5204, 2013

16 N. Woehrl, "Plasma-enhanced chemical vapor deposition of graphene on copper substrates" 4 : 2014

17 D. B. Hash, "Model based comparison of thermal and plasma chemical vapor deposition of carbon nanotubes" 93 : 750-752, 2003

18 Y. S. Kim, "Methane as an effective hydrogen source for single-layer graphene synthesis on Cu foil by plasma enhanced chemical vapor deposition" 5 : 1221-1226, 2013

19 L. V. Nang, "Low-temperature synthesis of graphene on Fe2O3 using inductively coupled plasma chemical vapor deposition" 92 : 437-439, 2013

20 L. X. Cheng, "Low temperature synthesis of graphite on Ni films using inductively coupled plasma enhanced CVD" 3 : 5192-5198, 2015

21 V. P. Pham, "Low damage predoping on CVD graphene/Cu using a chlorine inductively coupled plasma" 95 : 664-671, 2015

22 K. S. Kim, "Large-scale pattern growth of graphene films for stretchable transparent electrodes" 457 : 706-710, 2009

23 L.B. Gao, "Heteroepitaxial growth of wafer scale highly oriented graphene using inductively coupled plasma chemical vapor deposition" 3 : 2016

24 T. Terasawa, "Growth of graphene on Cu by plasma enhanced chemical vapor deposition" 50 : 869-874, 2012

25 S. Stankovich, "Graphene-based composite materials" 442 : 282-286, 2006

26 F. Schwierz, "Graphene transistors" 5 : 487-496, 2010

27 R. K. Joshi, "Graphene films and ribbons for sensing of O-2, and 100 ppm of CO and NO2 in practical conditions" 114 : 6610-6613, 2010

28 S.S. Sabri, "Graphene field effect transistors with parylene gate dielectric" 95 : 2009

29 R. R. Nair, "Fine structure constant defines visual transparency of graphene" 320 : 1308-1308, 2008

30 Y. B. Zhang, "Experimental observation of the quantum Hall effect and Berry's phase in graphene" 438 : 201-204, 2005

31 X. S. Li, "Evolution of graphene growth on Ni and Cu by carbon isotope labeling" 9 : 4268-4272, 2009

32 C. Berger, "Electronic confinement and coherence in patterned epitaxial graphene" 312 : 1191-1196, 2006

33 K. S. Novoselov, "Electric field effect in atomically thin carbon films" 306 : 666-669, 2004

34 D. C. Wei, "Critical crystal growth of graphene on dielectric substrates at low temperature for electronic devices" 52 : 14121-14126, 2013

35 L.V. Nang, "Controllable synthesis of high-quality graphene using inductively-coupled plasma chemical vapor deposition" 159 : 2012

36 W. Zhu, "Carrier scattering, mobilities, and electrostatic potential in monolayer, bilayer, and trilayer graphene" 80 : 2009

37 S. Vizireanu, "Carbon nanowalls growth by radiofrequency plasma-beam-enhanced chemical vapor deposition" 5 : 263-268, 2008