In this study, Y₂O₃ thin films were etched with inductively coupled plasma (ICP). The etch rate of Y₂O₃, and the selectivity of Y₂O₃ to YMnO₃ were investigated by varying Cl₂/(Cl₂+Ar) gas mixing ratio. The maximum etch rate of Y₂O...
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https://www.riss.kr/link?id=A82504922
2000
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500
학술저널
25-28(4쪽)
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다운로드다국어 초록 (Multilingual Abstract)
In this study, Y₂O₃ thin films were etched with inductively coupled plasma (ICP). The etch rate of Y₂O₃, and the selectivity of Y₂O₃ to YMnO₃ were investigated by varying Cl₂/(Cl₂+Ar) gas mixing ratio. The maximum etch rate of Y₂O...
In this study, Y₂O₃ thin films were etched with inductively coupled plasma (ICP). The etch rate of Y₂O₃, and the selectivity of Y₂O₃ to YMnO₃ were investigated by varying Cl₂/(Cl₂+Ar) gas mixing ratio. The maximum etch rate of Y₂O₃, and the selectivity of Y₂O₃ to YMnO₃ were 302/min, and 2.4 at Cl₂/(Cl₂+Ar) gas mixing ratio of 0.2 repectively. In x-ray photoelectron spectroscopy (XPS) analysis, Y₂O₃ thin film was dominantly etched by Ar ion bombardment, and was assisted by chemical reaction of Cl radical. These results were confirmed by secondary ion mass spectroscopy(SIMS) analysis. YCI, and YCl₃ existed at 126.03 a.m.u, and 192.3 a.m.u, respectively
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