Hydrogenated amorphous silicon(a-Si:H) thin films have been prepared by electron cyclotron resonance plasma-enhanced chemical vapor deposition(ECR PECVD) method. Ar gas and silane gas have been used as a plasma gas and a source gas respectively. 27.51...
Hydrogenated amorphous silicon(a-Si:H) thin films have been prepared by electron cyclotron resonance plasma-enhanced chemical vapor deposition(ECR PECVD) method. Ar gas and silane gas have been used as a plasma gas and a source gas respectively. 27.51kHz and 301kHz pulses have been applied to the microwave power of the ECR PECVD for the selective-generation of SiH3 radicals which are known as most desirable radicals for the deposition of high quality a-Si:H films. It was found that the total hydrogen content, its bonding configuration and substrate temperature of a-Si:H films have been changed. The optical constants such as refractive index(n). absorption coefficient( a ), the optical energy band gap(E_(g)) of a-Si:H have been increased. Especially the present method has reduced the defect density by one order of magnitude.
These results suggest that the present method provide much higher quality a-Si:H films than the conventional ECR PECVD method. The quality of a-Si:H films deposited by this new method is as good as that of a-Si:H films deposited by radio-frequency(RF) PECVD at temperatures higher than 250℃, even though the a-Si:H films were deposited without intentional heating of the substrate. These results show a possibility that plastic substrates can be used for TFT-LCDs.(thin film transistor-liquid crystal displays)