<P>We have developed a high-quality SiO<SUB>2</SUB> deposition process using an inductively coupled plasma chemical vapor deposition system for use as a gate oxide of AlGaN/GaN-on-Si metal-oxide-semiconductor heterostructure field-ef...
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https://www.riss.kr/link?id=A107669237
2013
-
SCOPUS,SCIE
학술저널
354-356(3쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
<P>We have developed a high-quality SiO<SUB>2</SUB> deposition process using an inductively coupled plasma chemical vapor deposition system for use as a gate oxide of AlGaN/GaN-on-Si metal-oxide-semiconductor heterostructure field-ef...
<P>We have developed a high-quality SiO<SUB>2</SUB> deposition process using an inductively coupled plasma chemical vapor deposition system for use as a gate oxide of AlGaN/GaN-on-Si metal-oxide-semiconductor heterostructure field-effect transistor (MOSHFET) for power switching applications. A breakdown field of ~12 MV/cm was achieved using the optimized deposition conditions that were successfully applied in fabrication of the normally off AlGaN/GaN-on-Si MOSHFETs. The fabricated device exhibited excellent characteristics: a maximum drain current density of 375 mA/mm, a threshold voltage of 3 V, and a breakdown voltage of 820 V.</P>
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