Dishing and Erosion Evaluations of Tungsten CMP Slurry inthe Orbital Polishing Syste

다국어 초록 (Multilingual Abstract)

The dishing and the erosion were evaluated on the tungsten CMP process with conventional and new developed slurry. The tungsten thin film was polished by orbital polishing equipment. Commercial pattern wafer was used for the evaluation. Both slurries were pre tested on the oxide region on the wafer surface and the removal rate was not different very much. At the pattern density examination, the erosion performance was increased at all processing condition due to the reduction of thickness loss in new slurry. However, the dishing thickness was not remarkably changed at high pattern density despite of the improvement at low pattern density. At the large pad area, the reduction of dishing thickness was clearly found at new tungsten slurry.

참고문헌 (Reference)

1 "Tungsten polishing on an orbital plaform using cabot semi-sperse W2000 slurry" 31-, 1997.

2 "In-situ electrochemical investigation of tungsten electrochemical behavior during chemical mechanical polishing" 145 (145): 3190-, 1998.

3 "Evaluation of H2O2 3-based W CMP slurries for 8 0.35 um CMOS Technology" 165-, 1998.

4 "Electrochemistry of chemical vapor deposited tungsten films with relevance to chemical mechanical polishing" 143 (143): 4095-, 1996.

5 "Electrochemical measurements during the chemical mechanical polishing of tungsten thin films" 144 : 3041-, 1997.

6 "Effect of slurry viscosity modification on oxide and tungsten CMP" 214 (214): 10-, 1998.

7 "Development of a robust KIO3 tungsten CMP process" 566 : 83-, 2000.

8 "Chemical mechanical polishing for fabrication W metal features as chip interconnects" 138 : 3460-, 1991.