Size Dependence of the Transport Properties of Silicon Nanostructures

다국어 초록 (Multilingual Abstract)

Silicon devices involving various p-type silicon nanostructures with a fixed length 20 μm and
thickness 40 nm, but with varying width in the range from ∼ 100 nm to 20 μm, were prepared by
using the top-down method in order to systematically study the width dependence of their intrinsic
transport property. Based on the Id-Vg characteristic measurements, the hole mobility (μh) and
concentration (nh) were extracted for all nanostructures. For structures of large widths (w > 1.0
μm, nanoribbon-type), nh decreases from 5.5 to 2.4 × 1017 cm−3 while μh increases from 160 to
380 cm2V−1s−1 as the width narrows down from 20 to 1.0 μm. Interestingly, however, nh and μh
are found to be correlated such that their product remains nearly constant for this width region,
the origin of which is unclear. For structures of small widths (w ≤ 500 nm, nanowire-type), nh
remains more or less constant at about 2.4 × 1017 cm−3 while μh decreases steadily from 340
to 240 cm2V−1s−1 as the width narrows down from 500 to 96 nm. This behavior of mobility
degradation with width narrowing in the nanowire region is likely to originate from the enhanced
surface scattering effect, but a detailed microscopic theory should be developed to explain this effect
quantitatively.

참고문헌 (Reference)

1 P. A. Lee, 57 : 287 -, 1985

2 A. Motayed, 90 : 43104 -, 2007

3 E. Abrahams, 73 : 251 -, 2001

4 Y. Cui, 293 : 1289 -, 2001

5 A. Kolmakov, 5 : 667 -, 2005

6 E. Stern, 55 : 3119 -, 2008

7 R. S. Wagner, 4 : 89 -, 1964

8 H. Sakaki, 19 : L735 -, 1980

9 R. Kotlyar, 84 : 5270 -, 2004

10 Y. Cui, 3 : 149 -, 2003

11 J. S. Jie, 89 : 223117 -, 2006

12 A. Kim, 91 : 103901 -, 2007

13 S. J. Lee,

14 S.-C. Wong, 42 : 969 -, 1998

15 S. Sze, "Physics of Semiconductor Devices" Wiley 1981

16 Won Il Park, "Electrical Properties of Delta-Doped Silicon-Nanowire Field-Effect Transistors" 한국물리학회 53 (53): 1759-1763, 2008