TiO2 thin films were deposited on p-type Si-wafer (100) substrates, from pure Ti target with a diameter of 3 inches, employing by a conventional RF magnetron reactive sputter system. For the fixed target-to-substrate distance (6cm), films were deposit...
TiO2 thin films were deposited on p-type Si-wafer (100) substrates, from pure Ti target with a diameter of 3 inches, employing by a conventional RF magnetron reactive sputter system. For the fixed target-to-substrate distance (6cm), films were deposited with several deposition conditions. Substrate temperature(Ts) was varied from 100 to 500℃. The sputtering was performed at RF powers in the range of 100∼250W for the deposition time of 0.5∼1.5 hours. The crystalline structure of the film was observed by XRD patterns for all films deposited with unique parameters. Both the surface image and the thickness of films were investigated by SEM. In addition, TiO2 thin films were grown by an another way which is two-step process. After depositing Ti thin layer on the substrate, it was annealed at several temperatures, with flowing a mixed gas(Ar+O2). The comparative study of both results for TiO2 thin films, which were grown by RF magnetron reactive sputter and two-step process, was carried out.