GaN 에피층의 급속 열처리 효과 = Effect of rapid thermal annealing of GaN EpiLayer

국문 초록 (Abstract)

질소 분위기 하에서 GaN 에피층의 고온 급속 열처리 효과를 조사하였다. 열처리는 950도의 급속 열처리로를 이용하여 수행하였다. 급속 열처리에 따른 효과는 x선 회절을 통하여 연구하였다. 열처리 시간이 증가할수록 Bragg 피크는 각도가 큰 쪽으로 이동하였다. 피크의 FWHM은 열처리 시간이 증가함에 따라 약간의 증가 후 감소하였다가 다시 증가하였다. 시료는 적절한 조건 하에서 급속 열처리 후 구조적인 특성의 개선이 관측되었다. 시료의 결정성의 향상은 에피층의 격자 관련 요소들의 흐트러짐의 감소에 기인한다.

목차 (Table of Contents)

• 요약
• Abstract
• I. 서론
• II. 실험
• III. 결과 및 논의
• IV. 결론
• 참고문헌

참고문헌 (Reference)

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