Solution-deposited hybrid gate dielectric materials = Solution-deposited hybrid gate dielectric materials

다국어 초록 (Multilingual Abstract)

In this work, we prepared layer-by-layer organic/inorganic hybrid multilayer dielectric films consisting of bi-functional alkylphosphonic acid and ultrathin ZrOx layers. These layer-by-layer organic/inorganic hybrid films are fabricated via solution processes and have low gate leakage current density, large electrical capacitance and thermal stability. Thinfilm transistors (TFTs) fabricated with organic semiconductors and inorganic semiconductors were used to test hybrid gate dielectric utility in electronics. These devices function well at low voltages. Furthermore, performance of the TFTs fabricated with the organic semiconductors is improved by functionalized with the alkylphosphonic acid self-assembled monolayers on surface of hybrid gate dielectric films.