다이아몬드성 탄소 박막의 특성

다국어 초록 (Multilingual Abstract)

The a-C : H films have been grown on the glass substrate by PECVD method, where plasma was generated with a 60 Hz line power source. The growth rate of films is found to be dependent of the partial pressure of C₂H₂. This growth rate is a little higher than that in which CH₄ instead of C₂H₂ is used. The transmittance is also much higher(95). The optical energy gap of films is in the range of 1.4 -1.8 eV depending on the partial pressure of C₂H₂. However, this energy gap, which is 1.8 eV, is found to be independent of the partial pressure of C₂H₂ for the thick films above 2000 Å. The carbonization is checked from peak intensities of D (sp³) and G(sp²) peaks in Roman spectra. The hydronization and C - H bonding status in films can also be determined from FTIR results. Both the bonding strength of C - H and the ratio of sp³ to sp² in bonding are found to be slightly dependent of partial pressure of C₂H₂. Judging from above results, we can conclude that the best value for partial pressure of C₂H₂ in growing process of thick films is about 13.8.