<P>Precise etch depth control of ultra-thin HfO<SUB>2</SUB> (3.5 nm) films applied as a gate oxide material was investigated by using atomic layer etching (ALET) with an energetic Ar beam and BCl<SUB>3</SUB> gas. A...
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https://www.riss.kr/link?id=A107593364
2009
-
SCOPUS,SCIE
학술저널
055202
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
<P>Precise etch depth control of ultra-thin HfO<SUB>2</SUB> (3.5 nm) films applied as a gate oxide material was investigated by using atomic layer etching (ALET) with an energetic Ar beam and BCl<SUB>3</SUB> gas. A...
<P>Precise etch depth control of ultra-thin HfO<SUB>2</SUB> (3.5 nm) films applied as a gate oxide material was investigated by using atomic layer etching (ALET) with an energetic Ar beam and BCl<SUB>3</SUB> gas. A monolayer etching condition of 1.2 Å/cycle with a low surface roughness and an unchanged surface composition was observed for ultra-thin, ALET-etched HfO<SUB>2</SUB> by supplying BCl<SUB>3</SUB> gas and an Ar beam at higher levels than the critical pressure and dose, respectively. When HfO<SUB>2</SUB>-nMOSFET devices were fabricated by ALET, a 70% increase in the drain current and a lower leakage current were observed compared with the device fabricated by conventional reactive ion etching, which was attributed to the decreased structural and electrical damage.</P>
Hybrid planar Hall-magnetoresistance sensor based on tilted cross-junction