C_3H_8-SiCl_4-H_2 시스템에서의 탄화 실리콘 증착에 대한 열역학적인 해석 = Thermodynamic Prediction of SiC Deposition in C_3H_8-SiCl_4-H_2 System

다국어 초록 (Multilingual Abstract)

In order to deposit a homogeneous and uniform β-SiC films by chemical vapor deposition, we demonstrated the phase stability of β-SiC over graphite and silicon via computational thermodynamic calculation considering pressure, temperature and gas composition as variables. The β-SiC predominant region over other solid phases like carbon and silicon was changed gradually and consistently with temperature and pressure. Practically these maps provide necessary conditions for homogeneous β-SiC deposition of single phase. With the thermodynamic analyses, the CVD apparatus for uniform coating was modeled and simulated with computational fluid dynamics to obtain temperature and flow distribution in the CVD chamber. It gave an inspiration for the uniform temperature distribution and low local flow velocity over the deposition chamber. These calculation and model simulation could provide milestones for improving the thickness uniformity and phase homogeneity.

참고문헌 (Reference)

1 J. Nishio, "Uniformity of 4H-SiC Epitaxial Layers Grown on 3-in Diameter Substrates" 285 (285): 113-122, 2003

2 K.-S. Cho, "SiC Materials Techniques for Semiconductor Production Line" 10 (10): 33-48, 2007

3 H. Habuka, "Polycrystalline Silicon Carbide Film Deposition using Monomethylsilane and Hydrogen Chloride Gases" 201 (201): 8961-8965, 2007

4 J. Lu, "Numerical Simulation of the Flow Field and Concentration Distribution in the Bulk Growth of Silicon Carbide Crystals" 292 (292): 519-522, 2006

5 R. Wang, "Kinetics of Halide Chemical Vapor Deposition of Silicon Carbide Film" 308 (308): 189-197, 2007

6 Y. Yan, "Kinetic and Microstructure of SiC Deposited from SiCl4-CH4-H2" 17 (17): 419-426, 2009

7 G. Chichignoud, "Chlorinated Silicon Carbide CVD Revisited for Polycrystalline Bulk Growth" 201 (201): 8888-8892, 2007