실리콘 웨이퍼 휨형상 측정 정밀도 향상을 위한 시스템변수 보정법 = System calibration method for Silicon wafer warpage measurement

다국어 초록 (Multilingual Abstract)

As a result of a mismatch of the residual stress between both sides of the silicon wafer, which warps and distorts during the patterning process. The accuracy of the warpage measurement is related to the calibration. A CCD camera was used for the calibration. Performing optimization of the error function constructed with phase values measured at each pixel on the CCD camera, the coordinates of each light source can be precisely determined. Measurement results after calibration was performed to determine the warpage of the silicon wafer demonstrate that the maximum discrepancy is 5.6㎛ with a standard deviation of 1.5㎛ in comparison with the test results obtained by using a Form TalySurf instrument.

목차 (Table of Contents)

• ABSTRACT
• 1. 서론
• 2. 시스템변수 보정
• 3. 측정결과
• 4. 결론
• REFERENCES

참고문헌 (Reference)

1 김병창, "거친 표면 형상측정을 위한 점광원 절대간섭계의 오차해석과 시스템 변수의 보정" 한국광학회 16 (16): 361-365, 2005

2 K. Verma, "Warpage Measurement on Dielectric Rough Surfaces of Microelectronics Devices by Far Infrared Fizeau Interferometry" 122 (122): 227-232, 2000

3 O. Kwon, "Rough surface interferometry at 10.6" 19 (19): 1862-1866, 1980

4 B. Han, "Moire interferometry for enginnering mechanics : current practices and future developments" 36 (36): 101-117, 2001

5 B. C. Kim, "Absolute interferometer for three-dimensional profile measurement of rough surfaces" 28 (28): 528-530, 2003

6 Cezard Z. Janikow, "A specialized genetic algorithm for numerical optimization problems" 798-783, 1990