졸 겔법에 의한 TiO2, BaTiO3 박막의 제조와 그 특성에 관한 연구 = A Study of Characteristic and Preparation of TiO2, BaTiO3 Thin Film by Sol-gel Method

다국어 초록 (Multilingual Abstract)

Purpose : In this study, TiO2, BaTiO3 thin films were prepared from metal naphthenates by sol-geland the properties of the films have been studied. High resolution X-ray diffraction, field emissionscanning electron microscope and UV spectrophotometer were used to analyze film’s property.
Purpose : In this study, TiO2, BaTiO3 thin films were prepared from metal naphthenates by sol-gel and the properties of the films have been studied. High resolution X-ray diffraction, field emission scanning electron microscope and UV spectrophotometer were used to analyze film’s property.
Methods : The precursor sol was spin-coated onto the soda-lime-silica glass at 1500 rpm for 10 sec. Prefired films were finally annealed at 500℃ for 30 min in air. The crystal structure and crystallinity of the films were investigated by High Resolution X-ray diffraction system. Surface character of the annealed film was evaluated by field emission scanning electron microscope and scanning probe microscope. The transmittances in the UV(200-380 nm), visible(380-750 nm) and NIR(750-900 nm) range was measured by UV visible NIR spectrophotometer.
Results : The TiO2 films was crystallized into anatase and BaTiO3 film has not been identified for its peak. The transmittances at visible wavelength range for TiO2, BaTiO3 film was 80% or more, BaTiO3 film had higher UV and blue light blocking than TiO2 film.
Conclusion : BaTiO3 film had a higher blocking rate of ultraviolet and blue light than TiO2 film, and the visible light transmission rate was measured at more than 80% from all Film.

국문 초록 (Abstract)

목적 : 소다-라임-실리카 유리(soda-lime-silica glass,SG) 기판위에 Ti, Ba-naphthenates를 출발원료로 사용하고 졸겔법으로 나노 결정질 TiO2, BaTiO3 박막을 제조하였다. 박막의 특성을 분석하기 위하여 X-선 회절 분석, 전자현미경, UV스펙트럼을 이용하여 연구하였다.
방법 : 코팅용액을 soda-lime-silica glass 기판 위에 스핀코팅하고 공기분위기에서 500℃에서 열분해시켜 박막을 제조하였다. 제조된 TiO2, BaTiO3 박막의 결정화도는 고분해능 X-선 회절분석법으로 그리고 표면미세구조와 거칠기는 전계 방출 현미경과 원자간력 현미경으로 또 자외선(200〜380 nm), 가시광선(380〜750 nm), 적외선(750〜900 nm) 영역의 투과율은 UV-Visible-NIR 분광광도계로 측정되었다.
결과 : TiO2박막은 아나타제 상이 존재하였으며, BaTiO3 박막은 최고 피크가 확인되지 않았다. 열처리한 TiO2, BaTiO3 박막의 가시광선 투과율은 80% 이상의 투과율을 나타냈으며, BaTiO3 박막은 TiO2 박막보다 자외선 및 청광 차단율이 높았다.
결론 : BaTiO3 박막은 TiO2 보다 자외선 및 청광에 대해 더 높은 차단율이 나타냈으며, 가시광선 투과율은 제조된 모든 박막에서 80% 이상의 투과율이 측정되었다.

참고문헌 (Reference)

1 Jeong WT, "Variations of ferroelectric property of tungsten-doped Bi4Ti3O12 (BIT) thin films" Changwon National Univ 2002

2 Lee MK, "Properties of TiO2Thin Films on InP Substrate Prepared by Metalorganic Chemical Vapor Deposition" 40 (40): 6543-6546, 2001

3 Ezhilvalavan S, "Progress in the developments of (Ba,Sr)TiO3 (BST)thin films for Gigabit era DRAMs" 65 (65): 227-248, 2000

4 Hwang KS, "Preparation of Epitaxial Pb(Zr,Ti)O3 Thin film on Nb-doped SrTiO3(100) Substrates by Dipping-Pyrolysis Process" 36 (36): 5221-5225, 1997

5 Hwang KS, "Preparation of Epitaxial Pb(Zr,Ti)O3 Thin Films on Mgo(100)Substrates by Dipping-Pyrolysis Process" 3 (3): 273-277, 1997

6 Yu J, "Preparation Microstructure and Photocatalytic Activity of the Porous TiO2Anatase Coating by Sol-Gel Processing" 17 (17): 163-171, 2000

7 Wu Y, "Oxygen-vacancyrelated dielectric relaxation in SrBi2Ta1.8V0.2O9ferroelectrics" 89 (89): 5647-5652, 2001

8 Vorobiev A, "Microwave loss mechanisms in Ba0.25Sr0.75TiO3 thin film varactors" 96 (96): 4642-4949, 2004

9 Aegerter MA, "Ferroelectric thin coatings" 151 (151): 195-202, 1992

10 Shibahara H, "Electron microscope study of the crystallization from amorphous phase in BaTiO3 thin films" 67 (67): 227-232, 1984

11 Carrano J, "Electrical and Reliability Properties of PZT Thin Films for Ulsi Dram Applications" 38 (38): 690-703, 1991

12 Srivastava R, "Effect of substrate on the surface acoustic wave transduction on PZT film" 108 (108): 21-26, 2011

13 Iijima Y, "Dielectric Constants of Deposited BaTiO3Thin Films" 24 (24): 401-403, 1985

14 Hwang KS, "Annealing effect on inplane alignment and surface morphology of epitaxial Bi4Ti3O12 thin films prepared by the chemical solution deposition" 16 (16): 2519-2525, 2001