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      SCOPUS SCIE

      Solution Processing with a Good Solvent Additive for Highly Reliable Organic Thin-Film Transistors

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      https://www.riss.kr/link?id=A107431985

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      <P>High-performance transistors require homogeneous crystalline thin films with high charge carrier mobilities on large substrates. We report a versatile solution process that uses a good solvent additive with a high boiling point. This method e...

      <P>High-performance transistors require homogeneous crystalline thin films with high charge carrier mobilities on large substrates. We report a versatile solution process that uses a good solvent additive with a high boiling point. This method enables the fabrication of uniform, large-area, polymer thin films with improved thin film crystallinity and electrical characteristics and high reliability organic transistors. We demonstrate here that the addition of a small amount of a good solvent additive with a high boiling point to the processing solution is highly effective in not only inducing the strong self-assembly of the conjugated polymer during film solidification by increasing the solvent evaporation time but also in ensuring the formation of a uniform film morphology. These characteristics were found to enhance the device performance of a poly(3-hexylthiophene) film processed from a mixed solvent containing chlorobenzene and 1,2,4-trichlorobenzene, which was found to exhibit a highest average field-effect mobility of 0.012 cm(2) V-1 s(-1) with excellent reliability over a 16 device array.</P>

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