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      KCI등재 SCI SCIE SCOPUS

      Design and Fabrication of Butt-Coupled Sampled Grating DBR Lasers Using Planar Buried Heterostructures

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      https://www.riss.kr/link?id=A104321823

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      다국어 초록 (Multilingual Abstract)

      A butt-coupled (BT) sampled grating distributed Bragg reflector laser diode (SGDBR-LD) was
      designed and fabricated using a planar buried heterostructure (PBH), enabling a low threshold
      current and a stable fundamental transverse mode. The maximum output power of the fabricated
      SGDBR-LD was 24 mW for 200 mA CW operation at 25 C. The measured output power was
      14 mW and 13 mW higher than those of a ridged waveguide (RWG) structure and a buried ridge
      stripe (BRS). Also, the threshold current was 2 times lower than those of the RWG and the BRS.
      Butt-coupled SGDBR-LD’s with target tuning ranges of 44.4 and 63.4 nm were fabricated, and the
      tuning ranges were experimentally measured to be 44.4 and 58 nm, respectively. The measured
      peak periods of the fabricated SGDBR-LD’s were well matched with theoretical values, and the
      output power was close to the calculated values in both cases. The spectrum of 78 channels spaced
      by 50 GHz within the tuning range of 35 nm was obtained by using the precise control of the SG
      and the phase control currents. A side-mode suppression ratio of more than 35 dB was obtained
      over the whole tuning range. The output power variation was less than 5 dB, which is 4 dB smaller
      than that of the RWG structure.lEv
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      A butt-coupled (BT) sampled grating distributed Bragg reflector laser diode (SGDBR-LD) was designed and fabricated using a planar buried heterostructure (PBH), enabling a low threshold current and a stable fundamental transverse mode. The maximum outp...

      A butt-coupled (BT) sampled grating distributed Bragg reflector laser diode (SGDBR-LD) was
      designed and fabricated using a planar buried heterostructure (PBH), enabling a low threshold
      current and a stable fundamental transverse mode. The maximum output power of the fabricated
      SGDBR-LD was 24 mW for 200 mA CW operation at 25 C. The measured output power was
      14 mW and 13 mW higher than those of a ridged waveguide (RWG) structure and a buried ridge
      stripe (BRS). Also, the threshold current was 2 times lower than those of the RWG and the BRS.
      Butt-coupled SGDBR-LD’s with target tuning ranges of 44.4 and 63.4 nm were fabricated, and the
      tuning ranges were experimentally measured to be 44.4 and 58 nm, respectively. The measured
      peak periods of the fabricated SGDBR-LD’s were well matched with theoretical values, and the
      output power was close to the calculated values in both cases. The spectrum of 78 channels spaced
      by 50 GHz within the tuning range of 35 nm was obtained by using the precise control of the SG
      and the phase control currents. A side-mode suppression ratio of more than 35 dB was obtained
      over the whole tuning range. The output power variation was less than 5 dB, which is 4 dB smaller
      than that of the RWG structure.lEv

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      유사연구자 (20) 활용도상위20명

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      학술지 이력

      학술지 이력
      연월일 이력구분 이력상세 등재구분
      2023 평가예정 해외DB학술지평가 신청대상 (해외등재 학술지 평가)
      2020-01-01 평가 등재학술지 유지 (해외등재 학술지 평가) KCI등재
      2011-01-01 평가 등재학술지 유지 (등재유지) KCI등재
      2009-01-01 평가 등재학술지 유지 (등재유지) KCI등재
      2007-01-01 평가 SCI 등재 (등재유지) KCI등재
      2005-01-01 평가 등재학술지 유지 (등재유지) KCI등재
      2002-07-01 평가 등재학술지 선정 (등재후보2차) KCI등재
      2000-01-01 평가 등재후보학술지 선정 (신규평가) KCI등재후보
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      학술지 인용정보

      학술지 인용정보
      기준연도 WOS-KCI 통합IF(2년) KCIF(2년) KCIF(3년)
      2016 0.47 0.15 0.31
      KCIF(4년) KCIF(5년) 중심성지수(3년) 즉시성지수
      0.26 0.2 0.26 0.03
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