Copper–Nickel Alloy Plating to Improve the Contact Resistivity of Metal Grid on Silicon Heterojunction Solar Cells

다국어 초록 (Multilingual Abstract)

As a dominant metallization technique of crystalline silicon solar cells, screen printing with silver paste has been generallyused in photovoltaic industries. In case of the silicon heterojunction solar cells (SHJ) structure, a metal contact with silverpaste has lower electrical conductivity than pure silver due to the other compositions of the paste. For the reason, copperplating is attractive substitute for the silver paste since the plated-copper contacts have high conductivity and easily reduceline width which is benefi cial to light absorption. In this experiment, we studied copper–nickel (Cu–Ni) alloy plating to forma seed layer of the copper plating on an indium tin oxide (ITO) layer which is used for the transparent conductive oxide ofthe SHJ solar cells. As a requirement of suitable seed layer, contact resistivity (ρ c ) between the seed and the ITO is importantto obtain high fi ll factor by decreasing series resistance of solar cells. Contact resistivity values of the samples with variednickel contents in the Cu–Ni fi lms were extracted by using transfer length method. Also, the composition ratio of the alloylayer was analyzed by energy dispersive spectrometer. Moreover, X-ray diff raction was used to compare lattice parameterand crystallite size of the fi lm.

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