Push-Push FET DRO에 부가된 유전체공진기의 전력증강 역할에 관한 분석 = Investigation on the Output Power Improvement of Push-Push FET DRO with an Additional DR

다국어 초록 (Multilingual Abstract)

In this paper, the output power improvement of Push-Push FET DRO by adding the identical DR at the drain port, as one used in the gate port, has been theoretically investigated. The investigation shows that the DR located between two microstrip lines locks the phase difference of two FET's outputs at 180 degree and improves the output power of Push-Push FET DRO. Since this effect can be used for correcting the impedance difference between two FET's output circuits and the electrical length error of the power combiner at the output circuit of Push-Push DRO, which may occur when fabricate the oscillator, the oscillator with an additional DR can be useful structure for fabricating oscillator.

목차 (Table of Contents)

• Ⅰ. 서론
• Ⅱ. Push-Push DRO 출력전력과 위상관계 분석
• Ⅲ. 두 도선 사이에 위치한 DR의 특성
• Ⅳ. DR에 의한 위상보정
• Ⅴ. 시뮬레이션 결과
• Ⅵ. 결론