Three dimesitylborane-substituted dibenzothiophenes were synthesized as high triplet energy host materials and their photophysical properties and device performances were investigated according to the position of substitution. The dimesitylborane moie...
Three dimesitylborane-substituted dibenzothiophenes were synthesized as high triplet energy host materials and their photophysical properties and device performances were investigated according to the position of substitution. The dimesitylborane moiety showed good electron withdrawing properties and the dibenzothiophene moiety had good electron donating properties. The chemical structures were performed by <sup>1</sup>H-NMR, <sup>13</sup>C-NMR. Also, the electrochemical properties were estimated from UV-vis spectroscopy, cyclic voltammetry(CV), and photoluminescence (PL). Synthesized host materials doped with FCNIrpic were used as an emitting layer for phosphorescence OLEDs (PHOLEDs) and the device performances such as Luminance, EQE, and Current efficiency were measured by using IVL measurement.