A new quasi-2D MOSFET model which inherently includes lateral eld eects and non-quasistatic (NQS) eects is proposed. Our comprehensive model solves the Poisson and continuity equations in the source and drain regions as well as the channel region by u...
A new quasi-2D MOSFET model which inherently includes lateral eld eects and non-quasistatic (NQS) eects is proposed. Our comprehensive model solves the Poisson and continuity equations in the source and drain regions as well as the channel region by using the harmonic
balance method. We can obtain surface potential, carrier density, and depletion depth at source and drain as well as at the channel of the MOSFET device. DC and AC modeling results for long- and short-channel nMOSFETs are compared with the results from a 2D device simulator,
NANOCAD.