<P>The self-heating effects (SHEs) of saddle metal oxide semiconductor field-effect transistors (MOSFETs) and gate dimensional impacts on thermal characteristics have been investigated on the basis of a realistic thermal conductivity of silicon ...
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https://www.riss.kr/link?id=A107608638
2014
-
SCOPUS,SCIE
학술저널
020303
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
<P>The self-heating effects (SHEs) of saddle metal oxide semiconductor field-effect transistors (MOSFETs) and gate dimensional impacts on thermal characteristics have been investigated on the basis of a realistic thermal conductivity of silicon ...
<P>The self-heating effects (SHEs) of saddle metal oxide semiconductor field-effect transistors (MOSFETs) and gate dimensional impacts on thermal characteristics have been investigated on the basis of a realistic thermal conductivity of silicon and other materials. Thermal characteristics were analyzed by thermal resistance of Si channel. Since Si material has larger thermal conductivity than that of silicon dioxide, it is shown that the length of the side gate of saddle MOSFETs determines heat dissipation of Si channel. Side gate of saddle MOSFETs can be one of the important parameter in device optimization. (C) 2014 The Japan Society of Applied Physics</P>
Review of solution-processed oxide thin-film transistors