Amorphous silicon carbide (a-SiC) thin films were prepared by plasma enhanced chemical vapor deposition. The films were post-deposition annealed in a N<SUB>2</SUB>-H<SUB>2</SUB> atmosphere at temperatures ranging from 700 to 13...
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https://www.riss.kr/link?id=A107538438
2014
-
SCOPUS,SCIE
학술저널
238-244(7쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
Amorphous silicon carbide (a-SiC) thin films were prepared by plasma enhanced chemical vapor deposition. The films were post-deposition annealed in a N<SUB>2</SUB>-H<SUB>2</SUB> atmosphere at temperatures ranging from 700 to 13...
Amorphous silicon carbide (a-SiC) thin films were prepared by plasma enhanced chemical vapor deposition. The films were post-deposition annealed in a N<SUB>2</SUB>-H<SUB>2</SUB> atmosphere at temperatures ranging from 700 to 1300<SUP>o</SUP>C. As the annealing temperature was increased from 1000 to 1300<SUP>o</SUP>C, nanocrystalline silicon carbide (nc-SiC) formed and the mean crystallite size varied from~2 to~5nm. The thermal energy at high annealing temperatures broke the Si-H and C-H bonds, and rearranged the amorphous network to generate local crystalline states, resulting in the formation of nc-SiC. The photoluminescence (PL) peaks varied in the wavelength range of~425 to~470nm with annealing temperature. The optical band gap of the films has been associated to the maximum PL peak position and estimated to range from~2.92 to~2.64eV.
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