Thermal Annealing Effects of Initial Zn Layers on the Structural and the Optical Properties of ZnO Thin Films Grown by Using PA-MBE

다국어 초록 (Multilingual Abstract)

ZnO thin films were grown on p-type Si (100) by using plasma-assisted molecular beam epitaxy (PA-MBE). Before the growth of the ZnO thin films, the initial Zn layers were deposited on the Si substrates. In order to investigate the effects of thermal annealing, we annealed the initial Zn layers at temperatures range from 500 to 700 ℃ for 30 min under oxygen ambient. The properties of the ZnO thin films with annealed initial Zn layers were investigated by using X-ray diffraction (XRD), room-temperature (RT) photoluminescence (PL), and scanning electron microscopy (SEM). The morphology of ZnO the thin films changed from flat to rugged which caused a change in the stress. The FWHM (full width at half maximum) of the ZnO (002) diffraction peak decreased and the intensity ratio of the ZnO (002) to the Si (400) peak increased when the Zn initial layer was annealed. The FWHM of the near-band edge (NBE) emission is decreased when the Zn initial layer was annealed, indicating that the optical property was enhanced.

참고문헌 (Reference)

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