<P>We report chemical doping (p-type) to reduce the sheet resistance of graphene films for the application of high-performance transparent conducting films. The graphene film synthesized by chemical vapor deposition was transferred to silicon ox...
http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
https://www.riss.kr/link?id=A107621207
2010
-
SCI,SCIE,SCOPUS
학술저널
285205
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
<P>We report chemical doping (p-type) to reduce the sheet resistance of graphene films for the application of high-performance transparent conducting films. The graphene film synthesized by chemical vapor deposition was transferred to silicon ox...
<P>We report chemical doping (p-type) to reduce the sheet resistance of graphene films for the application of high-performance transparent conducting films. The graphene film synthesized by chemical vapor deposition was transferred to silicon oxide and quartz substrates using poly(methyl methacrylate). AuCl<SUB>3</SUB> in nitromethane was used to dope the graphene films and the sheet resistance was reduced by up to 77% depending on the doping concentration. The p-type doping behavior was confirmed by characterizing the Raman G-band of the doped graphene film. Atomic force microscope and scanning electron microscope images reveal the deposition of Au particles on the film. The sizes of the Au particles are 10–100 nm. The effect of doping was also investigated by transferring the graphene films onto quartz and poly(ethylene terephthalate) substrates. The sheet resistance reached 150 Ω/sq at 87% transmittance, which is comparable to those of indium tin oxide conducting film. The doping effect was manifested only with 1–2 layer graphene but not with multi-layer graphene. This approach advances the numerous applications of graphene films as transparent conducting electrodes. </P>
Surface engineering of quantum dots for in vivo imaging