RISS 검색 - 국내학술지논문 상세보기

다국어 초록 (Multilingual Abstract)

In most cases, despite the bandgap tuning flexibility of ternary semiconducting nanowires, phase mixing during nanowiregrowth is inevitable because of the surface energy competition between the bulk stable zinc blende (ZB) and the metastablewurtzite (WZ) phase. As the electronic structure of the grown nanowires depends on not only the composition but also thecrystal structure of the nanowires, careful characterization of the phase mixing phenomena in the nanowires is significant.
However, because most of the phase analysis of grown nanowires relies on transmission electron microscopy (TEM), thephase analysis should be local, requires destructive sample preparation, and has a high time cost. Here, we developed amodified reciprocal space mapping method exploiting laboratory-based high-resolution X-ray diffraction (HR-XRD) forphase analysis in a one-dimensionally grown nanowire array on a (111) Si substrate in one measurement sequence. Themain difficulty of phase analysis in a nanowire array using HR-XRD is the overlap of the diffraction peaks resulting fromthe structural similarity between ZB and WZ. Using the proposed method, we could successfully separate the diffractionoverlapping of the WZ and ZB phases and reveal the lattice constants, composition, and effect of the strain of an InAsxP1−xnanowire array corresponding to the growth conditions in one measurement sequence. We also found that the crystallinityof metastable WZ was considerably lower than that of the bulk stable ZB in InAsxP1−x and that a phase fraction of WZ andZB in InAsxP1−x nanowire arrays could be tuned by adjusting their composition and diameter.

참고문헌 (Reference)

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