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      KCI등재 SCIE SCOPUS

      Electrocaloric effect in heterolayered potassium tantalate niobate thin films prepared by sol-gel method

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      https://www.riss.kr/link?id=A107384837

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      다국어 초록 (Multilingual Abstract)

      Heterolayered potassium tantalate niobate(KTN(70/30)/KTN(30/70)) thin films on Pt/Ti/SiO2/Si substrates prepared by the solgelprocess and spin coating method. When sintered at 700 oC or higher, the X-ray diffraction intensities of the perovskitephase were greatly increased, and it was observed as the main phase of the KTN heterolayered thin film. As the sinteringtemperature increased from 650 oC to 800 oC, the average grain size increased from 146nm to 380 nm, and the averagethickness of the KTN films coated six times was about 394-441 nm. Dielectric constant and dielectric loss of the KTN filmsintered at 750 oC and room temperature showed good properties of about 2850 and 0.573, respectively, and all films exhibitedthe typical dielectric relaxation characteristics. The phase transition temperature of KTN thin film was around 12-13 oC.
      Remanent polarization and the coercive field of KTN film sintered at 750 oC showed excellent properties of 23.98 μC/cm2 and35.41 kV/cm, respectively. Adiabatic temperature changes (ΔT) and electrocaloric strength of the KTN films sintered at 750 oCat 60 oC were 2.67 oC and 0.012 KcmkV-1, respectively.
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      Heterolayered potassium tantalate niobate(KTN(70/30)/KTN(30/70)) thin films on Pt/Ti/SiO2/Si substrates prepared by the solgelprocess and spin coating method. When sintered at 700 oC or higher, the X-ray diffraction intensities of the perovskitephase ...

      Heterolayered potassium tantalate niobate(KTN(70/30)/KTN(30/70)) thin films on Pt/Ti/SiO2/Si substrates prepared by the solgelprocess and spin coating method. When sintered at 700 oC or higher, the X-ray diffraction intensities of the perovskitephase were greatly increased, and it was observed as the main phase of the KTN heterolayered thin film. As the sinteringtemperature increased from 650 oC to 800 oC, the average grain size increased from 146nm to 380 nm, and the averagethickness of the KTN films coated six times was about 394-441 nm. Dielectric constant and dielectric loss of the KTN filmsintered at 750 oC and room temperature showed good properties of about 2850 and 0.573, respectively, and all films exhibitedthe typical dielectric relaxation characteristics. The phase transition temperature of KTN thin film was around 12-13 oC.
      Remanent polarization and the coercive field of KTN film sintered at 750 oC showed excellent properties of 23.98 μC/cm2 and35.41 kV/cm, respectively. Adiabatic temperature changes (ΔT) and electrocaloric strength of the KTN films sintered at 750 oCat 60 oC were 2.67 oC and 0.012 KcmkV-1, respectively.

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      참고문헌 (Reference)

      1 B. Neese, 321 (321): 821-823, 2008

      2 X.C. Zheng, 522 : 125-128, 2012

      3 A. S. Mischenko, 311 (311): 1270-1271, 2006

      4 F. S. Chen, 37 (37): 388-398, 1966

      5 K. Nakamura, 89 (89): 131115-, 2006

      6 S. Triebwasser, 114 (114): 63-70, 1959

      7 K.T. Kim, 66 (66): 662-669, 2003

      8 W. Geng, 27 (27): 3165-3169, 2015

      9 X. Moya, 25 (25): 1360-1365, 2013

      10 X. H. Hao, 110 (110): 064109-, 2011

      1 B. Neese, 321 (321): 821-823, 2008

      2 X.C. Zheng, 522 : 125-128, 2012

      3 A. S. Mischenko, 311 (311): 1270-1271, 2006

      4 F. S. Chen, 37 (37): 388-398, 1966

      5 K. Nakamura, 89 (89): 131115-, 2006

      6 S. Triebwasser, 114 (114): 63-70, 1959

      7 K.T. Kim, 66 (66): 662-669, 2003

      8 W. Geng, 27 (27): 3165-3169, 2015

      9 X. Moya, 25 (25): 1360-1365, 2013

      10 X. H. Hao, 110 (110): 064109-, 2011

      11 K. Nakamura, 104 (104): 013105-, 2008

      12 B. Liu, 20 (20): 1795-1799, 2014

      13 S. Wang, 17 (17): 159-162, 2000

      14 H. Maiwa, 55 (55): 10TB09-, 2016

      15 Mi-Ri Park, "The ferroelectric properties of Ce-doped PZT/BFO multilayer thin films prepared using the sol-gel method" 세라믹연구소 18 (18): 431-434, 2017

      16 이상은, "Effects of alcohol solvents on formation of the hydrated silica gel" 세라믹연구소 19 (19): 321-326, 2018

      17 Seo-Hyeon Jo, "Characterization of Pb(Zr0.52Ti0.48)O3/BiFeO3 multilayer thin films prepared by a sol-gel method" 세라믹연구소 13 (13): 631-634, 2012

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      학술지 이력

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      연월일 이력구분 이력상세 등재구분
      2023 평가예정 해외DB학술지평가 신청대상 (해외등재 학술지 평가)
      2022-10-24 학회명변경 한글명 : 세라믹연구소 -> 청정에너지연구소
      영문명 : Ceramic Research Institute -> Clean-Energy Research Institute
      KCI등재
      2020-01-01 평가 등재학술지 유지 (해외등재 학술지 평가) KCI등재
      2019-08-19 학회명변경 한글명 : 세라믹공정연구센터 -> 세라믹연구소
      영문명 : Ceramic Processing Research Center -> Ceramic Research Institute
      KCI등재
      2011-01-01 평가 등재학술지 유지 (등재유지) KCI등재
      2006-01-01 평가 SCI 등재 (등재후보1차) KCI등재
      2003-01-01 평가 등재후보학술지 선정 (신규평가) KCI등재후보
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