Real-time Temperature Estimation of SiC MOSFETs Using Gate Voltage at Zero-current Switching for Inverter Applications

다국어 초록 (Multilingual Abstract)

Nowadays, temperature monitoring has gained great focus to improve their reliability. For SiC MOSFETs, thermal sensitive electrical parameters (TSEP) are being widely investigated because of their ease of measurement and implementation. However, implementing such methods faces several critical problems, such as the ringing noise in the gate voltage waveform due to parasitic inductances and large output currents. This work proposes a gate voltage measurement method for inverter applications utilizing a zero-current switching (ZCS) period. We also propose slowing the gate switching speed during zero-current switching to obtain a stable gate voltage waveform for accurate estimation. We validate our proposed method by measuring the gate voltage waveforms of three commercial SiC devices through the double pulse test. Utilizing the plateau voltage, we demonstrate that temperature sensing can be performed within 5 % of error up to 100℃ temperature.

목차 (Table of Contents)

• Abstract
• I. INTRODUCTION
• II. PROPOSED ESTIMATION METHOD
• III. SIMULATION RESULTS
• IV. EXPERIMENTAL RESULTS
• V. CONCLUSION
• REFERENCES